Bi-Distance Approach to Determine the Topological Invariants of Silicon Carbide

The use of silicon carbide is increasing significantly in the fields research and technology. Topological indices enable data gathering on algebraic graphs provide a mathematical framework for analyzing chemical structural characteristics. In this paper, well-known degree-based topological are used to analyze structures carbides. To evaluate features various or non-chemical networks, variety defined. new concept related degree graph called "bi-distance" introduced, which calculate all additive as well multiplicative isomer carbide, Si2C3-1[t, h]. term derived from concepts distance such way that second can be indices.